Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
SCHRODINGER-EQUATION; PERFORMANCE; ELECTRONICS; Physics, Applied
Abstract
Nonquasistatic effects in ac characteristics of carbon nanotube field-effect transistors are examined by solving a full time-dependent, open-boundary Schrodinger equation. The nonquasistatic characteristics, such as the finite channel charging time, and the dependence of small signal transconductance and gate capacitance on the frequency, are explored. The validity of the widely used quasistatic approximation is examined. The results show that the quasistatic approximation overestimates the transconductance and gate capacitance at high frequencies, but gives a more accurate value for the intrinsic cutoff frequency over a wide range of bias conditions.
Journal Title
Applied Physics Letters
Volume
89
Issue/Number
20
Publication Date
1-1-2006
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Chen, Yupeng; Ouyang, Yigian; Guo, Jing; and Wu, Thomas X., "Time-dependent quantum transport and nonquasistatic effects in carbon nanotube transistors" (2006). Faculty Bibliography 2000s. 4671.
https://stars.library.ucf.edu/facultybib2000/4671
Comments
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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."