Nanocrystalline indium oxide-doped tin oxide thin film as low temperature hydrogen sensor

    Authors

    S. Shukla; S. Seal; L. Ludwig;C. Parish

    Comments

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    Abbreviated Journal Title

    Sens. Actuator B-Chem.

    Keywords

    nanocrystalline indium oxide-doped tin oxide; Pt-sputtered thin film; low temperature hydrogen sensor; GAS-SENSING PROPERTIES; ION-ASSISTED DEPOSITION; SOL-GEL PROCESS; PARTICLE-SIZE; H-2 SENSOR; SNO2; PALLADIUM; CO; NANOPARTICLES; SENSITIVITY; Chemistry, Analytical; Electrochemistry; Instruments & Instrumentation

    Abstract

    Hydrogen gas, within the concentration range of 100 ppm-4 vol.%, is successfully sensed at lower operating temperatures, 25 and 50degreesC, using the Pt-sputtered sol-gel dip-coated nanocrystalline (6-7 nm) 6.5 mol% In2O3-doped SnO2 semiconductor thin (100-150 nm) film sensor. Typically, for 1000 ppm of hydrogen, the maximum sensitivity values of 32 and 1600% are observed at 25 and 50degreesC, respectively; while for 2 vol.% hydrogen, the maximum sensitivity values of 50 and 70,000% are recorded at 25 and 50degreesC, respectively. At 25degreesC, for 4 vol.% (explosive limit as set by NASA) hydrogen, the maximum hydrogen gas sensitivity values of 107,887 and 2083% are observed for the Pt-sputtered thin films calcined at 500 and 600degreesC, respectively. (C) 2003 Elsevier B.V. All rights reserved.

    Journal Title

    Sensors and Actuators B-Chemical

    Volume

    97

    Issue/Number

    2-3

    Publication Date

    1-1-2004

    Document Type

    Article

    Language

    English

    First Page

    256

    Last Page

    265

    WOS Identifier

    WOS:000188700800013

    ISSN

    0925-4005

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