Investigations on hardness of rf sputter deposited SiCN thin films

    Authors

    K. B. Sundaram; Z. Alizadeh; R. M. Todi;V. H. Desai

    Comments

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    Abbreviated Journal Title

    Mater. Sci. Eng. A-Struct. Mater. Prop. Microstruct. Process.

    Keywords

    amorphous materials; sputtering; XPS; silicon carbide; CHEMICAL-VAPOR-DEPOSITION; CARBON NITRIDE FILMS; MECHANICAL-PROPERTIES; NITROGENATED CARBON; COATINGS; INDENTATION; BETA-SI3N4; RESONANCE; HYDROGEN; SOLIDS; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering

    Abstract

    Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputtering system using a SiC target. Films with various compositions were deposited on to silicon substrate by changing the N-2/Ar gas ratios during sputtering. Nano-indentation studies were performed to investigate the mechanical properties of the SiCN films. Surface morphology of the films was characterized by using Atomic Force Microscope. X-ray Photoelectron Spectroscopy (XPS) data indicated that the chemical status is highly sensitive to the nitrogen ratios during sputtering. (C) 2003 Elsevier B.V. All rights reserved.

    Journal Title

    Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing

    Volume

    368

    Issue/Number

    1-2

    Publication Date

    1-1-2004

    Document Type

    Article

    Language

    English

    First Page

    103

    Last Page

    108

    WOS Identifier

    WOS:000220055800012

    ISSN

    0921-5093

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