Title

Investigations on hardness of rf sputter deposited SiCN thin films

Authors

Authors

K. B. Sundaram; Z. Alizadeh; R. M. Todi;V. H. Desai

Comments

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Abbreviated Journal Title

Mater. Sci. Eng. A-Struct. Mater. Prop. Microstruct. Process.

Keywords

amorphous materials; sputtering; XPS; silicon carbide; CHEMICAL-VAPOR-DEPOSITION; CARBON NITRIDE FILMS; MECHANICAL-PROPERTIES; NITROGENATED CARBON; COATINGS; INDENTATION; BETA-SI3N4; RESONANCE; HYDROGEN; SOLIDS; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering

Abstract

Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputtering system using a SiC target. Films with various compositions were deposited on to silicon substrate by changing the N-2/Ar gas ratios during sputtering. Nano-indentation studies were performed to investigate the mechanical properties of the SiCN films. Surface morphology of the films was characterized by using Atomic Force Microscope. X-ray Photoelectron Spectroscopy (XPS) data indicated that the chemical status is highly sensitive to the nitrogen ratios during sputtering. (C) 2003 Elsevier B.V. All rights reserved.

Journal Title

Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing

Volume

368

Issue/Number

1-2

Publication Date

1-1-2004

Document Type

Article

Language

English

First Page

103

Last Page

108

WOS Identifier

WOS:000220055800012

ISSN

0921-5093

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