Title

CMOS RF and DC reliability subject to hot carrier stress and oxide soft breakdown

Authors

Authors

E. J. Xiao; J. S. Yuan;H. Yang

Comments

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Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

circuit reliability; dielectric breakdown; hot carriers; low-noise; amplifier; MOSFETs; voltage-controlled oscillators; PERFORMANCE DEGRADATION; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Hot carrier and soft breakdown effects are evaluated experimentally. A methodology to systematically study hot carrier and soft breakdown effects on RF circuits is developed. Device stress measurement and SpectreRF simulation are conducted to evaluate the impact of hot carrier and soft breakdown effects on RF circuits such as low-noise amplifier and voltage-controlled oscillator performances. Two design techniques to build reliable RF circuits are proposed.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

4

Issue/Number

1

Publication Date

1-1-2004

Document Type

Article; Proceedings Paper

Language

English

First Page

92

Last Page

98

WOS Identifier

WOS:000220708500015

ISSN

1530-4388

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