CMOS RF and DC reliability subject to hot carrier stress and oxide soft breakdown

    Authors

    E. J. Xiao; J. S. Yuan;H. Yang

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    circuit reliability; dielectric breakdown; hot carriers; low-noise; amplifier; MOSFETs; voltage-controlled oscillators; PERFORMANCE DEGRADATION; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Hot carrier and soft breakdown effects are evaluated experimentally. A methodology to systematically study hot carrier and soft breakdown effects on RF circuits is developed. Device stress measurement and SpectreRF simulation are conducted to evaluate the impact of hot carrier and soft breakdown effects on RF circuits such as low-noise amplifier and voltage-controlled oscillator performances. Two design techniques to build reliable RF circuits are proposed.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    4

    Issue/Number

    1

    Publication Date

    1-1-2004

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    92

    Last Page

    98

    WOS Identifier

    WOS:000220708500015

    ISSN

    1530-4388

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