Authors

P. Zhang; F. Stevie; R. Vanfleet; R. Neelakantan; M. Klimov; D. Zhou;L. Chow

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

PHASE EPITAXIAL-GROWTH; AMORPHOUS-SILICON; DEPTH DISTRIBUTIONS; DISLOCATION LOOPS; EXTENDED DEFECTS; SI; CHROMIUM; TRANSITION; CRYSTALLINE; SOLUBILITY; Physics, Applied

Abstract

The depth profiles of high dosage Cr-52(+) and V-51(+) ions implanted in (100) crystalline silicon after thermal anneal at temperatures between 300 degreesC and 1000 degreesC are studied by secondary ion mass spectrometry and cross-sectional transmission electron microscopy. At dosages of 1x10(15) ions/cm(2) and above, the surface layer of silicon substrate is amorphorized. During the subsequent thermal annealing, the depth profiles of the implanted ions are strongly coupled with the solid phase epitaxial growth of amorphous silicon. Silicide precipitate formation is important to understand the differences between Cr and V diffusion. After anneal of the 1x10(15) ions/cm(2) implanted samples at 900 degreesC and 1000 degreesC, most of the Cr has left the silicon, but only 10% of the V has escaped. The 1x10(14) ions/cm(2) Cr-implanted sample shows Cr ions exist only near the surface after 1000 degreesC anneal. The V-implanted sample, on the other hand, only shows a narrowing of the V profile after 1000 degreesC anneal.

Journal Title

Journal of Applied Physics

Volume

96

Issue/Number

2

Publication Date

1-1-2004

Document Type

Article

Language

English

First Page

1053

Last Page

1058

WOS Identifier

WOS:000222391500017

ISSN

0021-8979

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