Authors

G. Braunstein; A. Muraviev; H. Saxena; N. Dhere; V. Richter;R. Kalish

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

ZNO THIN-FILMS; LOW-TEMPERATURES; CONDUCTIVITY; DEPOSITION; EPITAXY; ATOMS; Physics, Applied

Abstract

p type doping of polycrystalline ZnO thin films, by implantation of arsenic ions, is demonstrated. The approach consisted of carrying out the implantations at liquid-nitrogen temperature (similar to-196 degrees C), followed by a rapid in situ heating of the sample, at 560 degrees C for 10 min, and ex situ annealing at 900 degrees C for 45 min in flowing oxygen. p type conductivity with a hole concentration of 2.5x10(13) cm(-2) was obtained using this approach, following implantation of 150 keV 5x10(14) As/cm(2). A conventional room-temperature implantation of 1x10(15) As/cm(2), followed by the same ex situ annealing, resulted in n type conductivity with a carrier concentration of 1.7x10(12) cm(-2).

Journal Title

Applied Physics Letters

Volume

87

Issue/Number

19

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000233058800028

ISSN

0003-6951

Download

Share

COinS