Surface-modified polymeric pads for enhanced performance during chemical mechanical planarization

    Authors

    S. Deshpande; S. Dakshinamurthy; S. C. Kuiry; R. Vaidyanathan; Y. S. Obeng;S. Seal

    Comments

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    Abbreviated Journal Title

    Thin Solid Films

    Keywords

    polyurethane; ASP; CMP; FTIR; nanoindentation; PECVD; TEOS; XPS; VAPOR-DEPOSITION; TETRAETHOXYSILANE; INDENTATION; FILMS; OXYGEN; LOAD; XPS; Materials Science, Multidisciplinary; Materials Science, Coatings &; Films; Physics, Applied; Physics, Condensed Matter

    Abstract

    The chemical mechanical planarization (CMP) process occurs at an atomic level at the slurry/wafer interface and hence slurries and polishing pads play a critical role in their successful implementation. Polyurethane is a commonly used polymer in the manufacturing of CMP pads. These pads are incompatible with some chemicals present in the CMP slurries, such as hydrogen peroxide. To overcome these problems, Psiloquest has developed new Application Specific Pads (ASP). Surface of such pads has been modified by depositing a thin film of tetraethyl orthosilicate using plasma-enhanced chemical vapor deposition (PECVD) process. In the present study, mechanical properties of such coated pads have been investigated using nanoindentation. The surface morphology and the chemistry of the ASP were studied using scanning electron microcopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy techniques. It was observed that mechanical and chemical properties of the pad top surface are a function of the PECVD coating time. Such PECVD-treated pads are found to be hydrophilic and do not require storage in aqueous media during the not-in-use period. The metal removal rate using such surface-modified polishing pads was found to increase linearly with the PECVD coating time. (c) 2005 Elsevier B.V. All rights reserved.

    Journal Title

    Thin Solid Films

    Volume

    483

    Issue/Number

    1-2

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    261

    Last Page

    269

    WOS Identifier

    WOS:000229681700044

    ISSN

    0040-6090

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