Elucidating Cu-glycine and BTA complexations in Cu-CMP using SIMS and XPS

    Authors

    S. Deshpande; S. C. Kuiry; M. Klimov;S. Seal

    Comments

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    Abbreviated Journal Title

    Electrochem. Solid State Lett.

    Keywords

    CHEMICAL-MECHANICAL PLANARIZATION; CORROSION-INHIBITORS; COPPER; BENZOTRIAZOLE; PEROXIDE; ELECTROCHEMISTRY; SPECTROSCOPY; Electrochemistry; Materials Science, Multidisciplinary

    Abstract

    The role of oxidants, complexing agents, and inhibitors in copper surface modification during Cu-chemical mechanical planarization (CMP) process was studied using secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). The changes in the Cu surface chemistry in the presence of hydrogen peroxide, glycine, and benzotriazole (BTA) were investigated, with a special attention to the effect of pH, Cu-glycine-, and Cu-BTA-complex formations. The present investigation corroborates the earlier reported results of an increased copper dissolution in solution containing glycine and hydrogen peroxide, and a decreased removal rate of copper in the presence of benzotriazole due to the formation of a Cu-BTA polymeric film. (C) 2005 The Electrochemical Society.

    Journal Title

    Electrochemical and Solid State Letters

    Volume

    8

    Issue/Number

    4

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    G98

    Last Page

    G101

    WOS Identifier

    WOS:000228326500027

    ISSN

    1099-0062

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