Authors

M. V. Dolguikh; A. V. Muravjov; R. E. Peale; M. Klimov; O. A. Kuznetsov;E. A. Uskova

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

STIMULATED-EMISSION; PHONON SCATTERING; HOT HOLES; GERMANIUM; FIELDS; LASER; SEMICONDUCTORS; ABSORPTION; MOBILITY; Physics, Applied

Abstract

A far-infrared laser concept based on intersubband transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte Carlo simulation of hot-hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical hole transport in the presence of an in-plane magnetic field. Population inversion on intersubband transitions arises due to light-hole accumulation in E perpendicular to B fields, as in the bulk p-Ge laser. However, the considered structure achieves spatial separation of hole accumulation regions from the doped layers, which reduces ionized-impurity and carrier-carrier scattering for the majority of light holes. This allows a remarkable increase of the gain in comparison with bulk p-Ge lasers. Population inversion and gain sufficient for laser operation are expected up to 77 K. Test structures grown by chemical-vapor deposition demonstrate feasibility of producing the device with sufficient active thickness to allow quasioptical electrodynamic cavity solutions.

Journal Title

Journal of Applied Physics

Volume

98

Issue/Number

2

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

7

WOS Identifier

WOS:000230931500007

ISSN

0021-8979

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