Multilayer silicon cavity mirrors for the far-infrared p-Ge laser

    Authors

    T. W. Du Bosq; A. V. Muravjov; R. E. Peale;C. J. Fredricksen

    Comments

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    Abbreviated Journal Title

    Appl. Optics

    Keywords

    Optics

    Abstract

    Multilayer mirrors capable of > 99.9% reflectivity in the far infrared (70-200 mu m wavelengths) were constructed using thin silicon etalons separated by empty gaps. Calculations indicate that only three periods are required to produce 99.9% reflectivity because of the large difference between the index of refraction of silicon (3.384) and the vacuum (1). The mirror was assembled from high-purity silicon wafers, with resistivity over 4000 Omega cm to reduce free-carrier absorption. Wafers were double-side polished with faces parallel within 10 are sec. The multilayer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser. Dependence of reflectivity on design accuracy was considered. (c) 2005 Optical Society of America.

    Journal Title

    Applied Optics

    Volume

    44

    Issue/Number

    33

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    7191

    Last Page

    7195

    WOS Identifier

    WOS:000233345000025

    ISSN

    1559-128X

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