Title

Multilayer silicon cavity mirrors for the far-infrared p-Ge laser

Authors

Authors

T. W. Du Bosq; A. V. Muravjov; R. E. Peale;C. J. Fredricksen

Comments

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Abbreviated Journal Title

Appl. Optics

Keywords

Optics

Abstract

Multilayer mirrors capable of > 99.9% reflectivity in the far infrared (70-200 mu m wavelengths) were constructed using thin silicon etalons separated by empty gaps. Calculations indicate that only three periods are required to produce 99.9% reflectivity because of the large difference between the index of refraction of silicon (3.384) and the vacuum (1). The mirror was assembled from high-purity silicon wafers, with resistivity over 4000 Omega cm to reduce free-carrier absorption. Wafers were double-side polished with faces parallel within 10 are sec. The multilayer mirror was demonstrated as a cavity mirror for the far-infrared p-Ge laser. Dependence of reflectivity on design accuracy was considered. (c) 2005 Optical Society of America.

Journal Title

Applied Optics

Volume

44

Issue/Number

33

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

7191

Last Page

7195

WOS Identifier

WOS:000233345000025

ISSN

1559-128X

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