Wavelength selection for the far-infrared p-Ge laser using etched silicon lamellar gratings

    Authors

    T. W. Du Bosq; R. E. Peale; E. W. Nelson; A. V. Muravjov; D. A. Walters; G. Subramanian; K. B. Sundaram;C. J. Fredricksen

    Comments

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    Abbreviated Journal Title

    Opt. Laser Technol.

    Keywords

    terahertz; germanium; laser; CAVITY; Optics; Physics, Applied

    Abstract

    A lamellar mirror made from Si wafer by anisotropic chemical etching and coated with gold has been demonstrated as an intracavity wavelength selector for the far-infrared p-Ge laser. The etching process produces rectangular grooves with precisely predetermined depth and 100 nm surface smoothness. This lamellar-grating structure defines the resonant laser wavelength within the broad tuning range of the p-Ge laser. Single wavelength laser operation with this mirror has been demonstrated on the third-order resonance with ail active cavity finesse of at least 0.09. (C) 2004 Elsevier Ltd. All rights reserved.

    Journal Title

    Optics and Laser Technology

    Volume

    37

    Issue/Number

    2

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    87

    Last Page

    91

    WOS Identifier

    WOS:000225680400001

    ISSN

    0030-3992

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