Title

An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect

Authors

Authors

C. S. Ho; K. Y. Huang; M. Tang;J. J. Liou

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

DEGRADATION; MOSFETS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

An analytical threshold voltage model of NMOSFETs including the effect of hot-carrier-induced interface charges is presented. A step function describing the interface charge distribution along the channel is used to account for the hot carrier induced damage, and a pseudo-2D method is applied to derive the surface potential. The threshold voltage model is then developed by solving the gate-to-source voltage at the onset of surface inversion where the minimum surface potential equals the channel potential. Both the drain-induced barrier lowering (DIBL) and body effects are included in the present model as well. The present threshold voltage model is validated for both fresh and damaged devices. The results show that the threshold voltage shifts upward and approaches a maximum value with negative interface charges and shifts downward and reaches a minimum value with positive interface charges as the interface charge region length is increased from zero to the channel length. Model is successfully verified using simulation data obtained from TCAD (technology-based computer-aided design). (c) 2004 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

45

Issue/Number

7-8

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

1144

Last Page

1149

WOS Identifier

WOS:000230374600013

ISSN

0026-2714

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