Gate oxide breakdown on nMOSFET cutoff frequency and breakdown resistance

    Authors

    Y. Liu; A. Sadat;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    breakdown spot resistance; cutoff frequency; gate capacitance; gate; oxide breakdown; LC oscillator; nMOS transistors; oscillation frequency; MOSFET DRAIN CURRENT; SOFT BREAKDOWN; CMOS; PERFORMANCE; VARACTORS; DESIGN; VCOS; NM; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Gate oxide breakdown effect on CMOS RF devices has been examined. The breakdown spot resistance and total gate capacitance of nMOS transistors decrease with stress. The analytical equation of cutoff frequency including the gate oxide breakdown effect is derived. The impact of oxide breakdown on the performance of an LC oscillator is evaluated. The oscillation frequency of the LC oscillator increases with oxide breakdown.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    5

    Issue/Number

    2

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    282

    Last Page

    288

    WOS Identifier

    WOS:000230223000018

    ISSN

    1530-4388

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