Title

Gate oxide breakdown on nMOSFET cutoff frequency and breakdown resistance

Authors

Authors

Y. Liu; A. Sadat;J. S. Yuan

Comments

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Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

breakdown spot resistance; cutoff frequency; gate capacitance; gate; oxide breakdown; LC oscillator; nMOS transistors; oscillation frequency; MOSFET DRAIN CURRENT; SOFT BREAKDOWN; CMOS; PERFORMANCE; VARACTORS; DESIGN; VCOS; NM; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Gate oxide breakdown effect on CMOS RF devices has been examined. The breakdown spot resistance and total gate capacitance of nMOS transistors decrease with stress. The analytical equation of cutoff frequency including the gate oxide breakdown effect is derived. The impact of oxide breakdown on the performance of an LC oscillator is evaluated. The oscillation frequency of the LC oscillator increases with oxide breakdown.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

5

Issue/Number

2

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

282

Last Page

288

WOS Identifier

WOS:000230223000018

ISSN

1530-4388

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