Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
LIGHT-EMITTING-DIODES; SINGLE-CRYSTAL; ZINC-OXIDE; GAN; FILMS; Physics, Applied
Abstract
Carrier trapping in Li-doped ZnO was studied using Electron Beam Induced Current technique, as well as cathodoluminescence spectroscopy and persistent photoconductivity measurements. Under electron beam excitation, the minority carrier diffusion length underwent a significant increase, which was correlated with growing carrier lifetime, as demonstrated by the irradiation-induced decay of CL intensity of the near-band-edge transition. Variable-temperature cathodoluminescence and photoconductivity experiments showed evidence of carrier trapping and yielded activation energies of 280 and 245 meV, respectively. These observations are attributed to the presence of a deep, Li-related acceptor state.
Journal Title
Applied Physics Letters
Volume
87
Issue/Number
21
Publication Date
1-1-2005
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Lopatiuk, O.; Chernyak, L.; Osinsky, A.; and Xie, J. Q., "Lithium-related states as deep electron traps in ZnO" (2005). Faculty Bibliography 2000s. 5429.
https://stars.library.ucf.edu/facultybib2000/5429
Comments
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