Electron trapping effects in C- and Fe-doped GaN and AlGaN

    Authors

    O. Lopatiuk; A. Osinsky; A. Dabiran; K. Gartsman; I. Feldman;L. Chernyak

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    III-nitrides; cathodoluminescence; EBIC; lifetime; diffusion length; P-TYPE GAN; MINORITY-CARRIER TRANSPORT; ACCEPTOR BINDING-ENERGIES; GALLIUM NITRIDE; PHOTOLUMINESCENCE SPECTROSCOPY; PERSISTENT; PHOTOCONDUCTIVITY; OPTICAL METASTABILITY; DIFFUSION LENGTH; BUFFER; LAYERS; CARBON; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Iron- and carbon-doped GaN and iron-doped Al0.2Ga0.8N irradiated by low energy electron beam of scanning electron microscope were studied by cathodoluminescence and electron beam-induced current techniques. Irradiation is shown to induce a systematic decay of the cathodoluminescence intensity, which is accompanied by increased electronic carrier diffusion length, indicating the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements yielded activation energies for irradiation-induced effects of 210, 230, and 360 meV for GaN:Q GaN:Fe, and Al0.2Ga0.8N:Fe, respectively. These observations are consistent with trapping of non-equilibrium electrons on deep, non-ionized acceptor levels. (c) 2005 Elsevier Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    49

    Issue/Number

    10

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    1662

    Last Page

    1668

    WOS Identifier

    WOS:000233750300014

    ISSN

    0038-1101

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