Title

Electron trapping effects in C- and Fe-doped GaN and AlGaN

Authors

Authors

O. Lopatiuk; A. Osinsky; A. Dabiran; K. Gartsman; I. Feldman;L. Chernyak

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

III-nitrides; cathodoluminescence; EBIC; lifetime; diffusion length; P-TYPE GAN; MINORITY-CARRIER TRANSPORT; ACCEPTOR BINDING-ENERGIES; GALLIUM NITRIDE; PHOTOLUMINESCENCE SPECTROSCOPY; PERSISTENT; PHOTOCONDUCTIVITY; OPTICAL METASTABILITY; DIFFUSION LENGTH; BUFFER; LAYERS; CARBON; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Iron- and carbon-doped GaN and iron-doped Al0.2Ga0.8N irradiated by low energy electron beam of scanning electron microscope were studied by cathodoluminescence and electron beam-induced current techniques. Irradiation is shown to induce a systematic decay of the cathodoluminescence intensity, which is accompanied by increased electronic carrier diffusion length, indicating the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements yielded activation energies for irradiation-induced effects of 210, 230, and 360 meV for GaN:Q GaN:Fe, and Al0.2Ga0.8N:Fe, respectively. These observations are consistent with trapping of non-equilibrium electrons on deep, non-ionized acceptor levels. (c) 2005 Elsevier Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

49

Issue/Number

10

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

1662

Last Page

1668

WOS Identifier

WOS:000233750300014

ISSN

0038-1101

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