Impact of CMP consumables on copper metallization reliability

    Authors

    Y. S. Obeng; J. E. Ramsdell; S. Deshpande; S. C. Kuiry; K. Chamma; K. A. Richardson;S. Seal

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Semicond. Manuf.

    Keywords

    chemical mechanical planarization (CMP); copper; pads; reliability; ELECTROPLATED CU; Engineering, Manufacturing; Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter

    Abstract

    Over the past few years, the chemical mechanical planarization (CMP) community has systematically characterized the device reliability issues associated with the introduction of copper metallization into integrated circuit fabrication. To gain further understanding of the impact of CMP processing on device performance, this paper reports in detail the interactions of simulated copper slurries and pristine segmented polyurethanes. These studies clearly show that polyurethane is fundamentally incompatible with some of the chemicals used in copper CMP, such as hydrogen peroxide. Experimental copper polishing data on both polyurethane and polyolefin-based pads are compared. The pad performance differences between the polyurethane and polyolefin-based pads are explained based on the chemistry of the base polymers used in the pad fabrication. These results are incorporated into the design and fabrication of a new class of polyolefins-based application specific pads.

    Journal Title

    Ieee Transactions on Semiconductor Manufacturing

    Volume

    18

    Issue/Number

    4

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    688

    Last Page

    694

    WOS Identifier

    WOS:000233379400029

    ISSN

    0894-6507

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