Title

Impact of CMP consumables on copper metallization reliability

Authors

Authors

Y. S. Obeng; J. E. Ramsdell; S. Deshpande; S. C. Kuiry; K. Chamma; K. A. Richardson;S. Seal

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Semicond. Manuf.

Keywords

chemical mechanical planarization (CMP); copper; pads; reliability; ELECTROPLATED CU; Engineering, Manufacturing; Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter

Abstract

Over the past few years, the chemical mechanical planarization (CMP) community has systematically characterized the device reliability issues associated with the introduction of copper metallization into integrated circuit fabrication. To gain further understanding of the impact of CMP processing on device performance, this paper reports in detail the interactions of simulated copper slurries and pristine segmented polyurethanes. These studies clearly show that polyurethane is fundamentally incompatible with some of the chemicals used in copper CMP, such as hydrogen peroxide. Experimental copper polishing data on both polyurethane and polyolefin-based pads are compared. The pad performance differences between the polyurethane and polyolefin-based pads are explained based on the chemistry of the base polymers used in the pad fabrication. These results are incorporated into the design and fabrication of a new class of polyolefins-based application specific pads.

Journal Title

Ieee Transactions on Semiconductor Manufacturing

Volume

18

Issue/Number

4

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

688

Last Page

694

WOS Identifier

WOS:000233379400029

ISSN

0894-6507

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