Interfacial thermal conductivity: Insights from atomic level simulation

    Authors

    S. R. Phillpot; P. K. Schelling;P. K. Keblinski

    Comments

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    Abbreviated Journal Title

    J. Mater. Sci.

    Keywords

    MOLECULAR-DYNAMICS SIMULATION; GRAIN-BOUNDARIES; RESISTANCE; TRANSPORT; Materials Science, Multidisciplinary

    Abstract

    We analyze the results of molecular-dynamics simulations of the interfacial (Kapitza) resistance of representative grain boundaries in Si. Simulations of the interactions of phonon wave packets with the Si grain boundaries show that the scattering process depends strongly on both the branch and wavelength of the incident phonons. This approach has the potential for providing detailed spectral information to mesoscale simulations of thermal transport in interfacial systems. (c) 2005 Springer Science + Business Media, Inc.

    Journal Title

    Journal of Materials Science

    Volume

    40

    Issue/Number

    12

    Publication Date

    1-1-2005

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    3143

    Last Page

    3148

    WOS Identifier

    WOS:000229972700015

    ISSN

    0022-2461

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