Abbreviated Journal Title
J. Appl. Phys.
Keywords
REFRACTIVE-INDEX; DEPENDENCE; INTERFEROMETER; WAVELENGTH; INP; Physics, Applied
Abstract
6H single-crystal silicon carbide (SiC) is an excellent optical material for extremely high temperature applications. Furthermore, the telecommunication infrared band (e.g., 1500-1600 nm) is an eye safe and high commercial maturity optical technology. With this motivation, the thermo-optic coefficient partial derivative n/partial derivative T for 6H single-crystal SiC is experimentally measured and analyzed from near room temperature to a high temperature of 1273 K with data taken at the 1550 nm wavelength. Specifically, the natural etalon behavior of 6-H single-crystal SiC is exploited within a simple polarization-insensitive hybrid fiber-free-space optical interferometric system to take accurate and rapid optical power measurements leading to partial derivative n/partial derivative T data. The reported results are in agreement with the previously reported research at the lower < 600 K temperatures.
Journal Title
Journal of Applied Physics
Volume
98
Issue/Number
10
Publication Date
1-1-2005
Document Type
Article
DOI Link
Language
English
First Page
5
WOS Identifier
ISSN
0021-8979
Recommended Citation
Riza, Nabeel A.; Arain, Muzzamil; and Perez, Frank, "6-H single-crystal silicon carbide thermo-optic coefficient measurements for ultrahigh temperatures up to 1273 K in the telecommunications infrared band" (2005). Faculty Bibliography 2000s. 5600.
https://stars.library.ucf.edu/facultybib2000/5600
Comments
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