Analysis and modeling of LC oscillator reliability

    Authors

    A. Sadat; Y. Liu; C. Z. Yu;J. S. Yuan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    amplitude of oscillation; gate oxide breakdown; hot carriers; LC; oscillator; MOS varactor; SOFT-BREAKDOWN; PHASE NOISE; HOT-CARRIER; PERFORMANCE; DESIGN; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    In this paper, MOS device degradations due to hot carrier and gate oxide breakdown are shown experimentally, and their effects on the NMOS LC oscillator have been evaluated analytically and through SpectreRF simulation. The reduction in transconductance of the differential pair transistors may cause the oscillation to cease. The amplitude of oscillation reduces as the equivalent tank resistance decreases due to the breakdown effect on the MOS varactor. The reduction of amplitude reduces the tank capacitances, and therefore shifts the frequency of oscillation and increases the oscillator phase noise. The tank amplitude of the oscillator is derived analytically. A closed-form expression for the average capacitance of the varactor that accounts for large-signal effects is presented. Finally, a set of guidelines to design an LC oscillator in reliability is presented.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    5

    Issue/Number

    1

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    119

    Last Page

    126

    WOS Identifier

    WOS:000229414400013

    ISSN

    1530-4388

    Share

    COinS