Title

Microstructural and electrical resistance analysis of laser-processed SiC substrates for wide bandgap semiconductor materials

Authors

Authors

I. A. Salama; N. R. Quick;A. Kar

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Mater. Sci.

Keywords

SILICON-CARBIDE; IMPLANTATION; ALUMINUM; BORON; Materials Science, Multidisciplinary

Abstract

Highly conductive phases have been generated on different polytypes of SiC substrates using a laser direct-write technique. Incorporation of both n-type and p-type impurities into the SiC substrates was accomplished by laser irradiation in dopant-containing ambients. X-ray diffraction, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy have been used to detect the presence of the dopant atoms and the compositional variation induced by laser irradiation. Scanning electron microscopy was used to study the microstructure, morphology and dimensions of the converted regions. The conversion in electric resistance has been attributed to both structural and compositional variations observed for the irradiated tracks (c) 2005 Springer Science + Business Media, Inc.

Journal Title

Journal of Materials Science

Volume

40

Issue/Number

15

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

3969

Last Page

3980

WOS Identifier

WOS:000231449500015

ISSN

0022-2461

Share

COinS