Microstructural and electrical resistance analysis of laser-processed SiC substrates for wide bandgap semiconductor materials

    Authors

    I. A. Salama; N. R. Quick;A. Kar

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    J. Mater. Sci.

    Keywords

    SILICON-CARBIDE; IMPLANTATION; ALUMINUM; BORON; Materials Science, Multidisciplinary

    Abstract

    Highly conductive phases have been generated on different polytypes of SiC substrates using a laser direct-write technique. Incorporation of both n-type and p-type impurities into the SiC substrates was accomplished by laser irradiation in dopant-containing ambients. X-ray diffraction, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy have been used to detect the presence of the dopant atoms and the compositional variation induced by laser irradiation. Scanning electron microscopy was used to study the microstructure, morphology and dimensions of the converted regions. The conversion in electric resistance has been attributed to both structural and compositional variations observed for the irradiated tracks (c) 2005 Springer Science + Business Media, Inc.

    Journal Title

    Journal of Materials Science

    Volume

    40

    Issue/Number

    15

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    3969

    Last Page

    3980

    WOS Identifier

    WOS:000231449500015

    ISSN

    0022-2461

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