Design and integration of novel SCR-based devices for ESD protection in CMOS/BiCMOS technologies

    Authors

    J. A. Salcedo; J. J. Liou;J. C. Bernier

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    electrostatic discharge (ESD); high-holding low-voltage trigger silicon; controlled rectifier (HH-LVTSCR); holding voltage; latchup; voltage; snapback; ELECTROSTATIC DISCHARGE ESD; SILICON-GERMANIUM TECHNOLOGIES; HOLDING; VOLTAGE; CMOS TECHNOLOGY; LATCHUP; CIRCUITS; DANGER; LVTSCR; OUTPUT; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Robust and novel devices called high-holding low-voltage trigger silicon controlled rectifiers (HH-LVTSCRS) for electrostatic discharge (ESD) protection of integrated circuits (ICs) are designed, fabricated and characterized. The S-type current-voltage (I-V) characteristics of the HH-LVTSCRs are adjustable to different operating conditions by changing the device dimensions and terminal interconnections. Comparison between complementary n- and p-type HH-LVTSCR devices shows that n-type devices perform better than p-type devices when a low holding voltage (V-H) is allowed during the on-state of the ESD protection structure, but when a relatively. high holding voltage is required, p-type devices perform better. Results further demonstrate that HH-LVTSCRs with a multiple-finger layout render high levels of ESD protection per unit area, applicable in the design of ICs with stringent ESD protection requirements of over 15 kV IEC.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    52

    Issue/Number

    12

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    2682

    Last Page

    2689

    WOS Identifier

    WOS:000233682200021

    ISSN

    0018-9383

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