Title

Design and integration of novel SCR-based devices for ESD protection in CMOS/BiCMOS technologies

Authors

Authors

J. A. Salcedo; J. J. Liou;J. C. Bernier

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

electrostatic discharge (ESD); high-holding low-voltage trigger silicon; controlled rectifier (HH-LVTSCR); holding voltage; latchup; voltage; snapback; ELECTROSTATIC DISCHARGE ESD; SILICON-GERMANIUM TECHNOLOGIES; HOLDING; VOLTAGE; CMOS TECHNOLOGY; LATCHUP; CIRCUITS; DANGER; LVTSCR; OUTPUT; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Robust and novel devices called high-holding low-voltage trigger silicon controlled rectifiers (HH-LVTSCRS) for electrostatic discharge (ESD) protection of integrated circuits (ICs) are designed, fabricated and characterized. The S-type current-voltage (I-V) characteristics of the HH-LVTSCRs are adjustable to different operating conditions by changing the device dimensions and terminal interconnections. Comparison between complementary n- and p-type HH-LVTSCR devices shows that n-type devices perform better than p-type devices when a low holding voltage (V-H) is allowed during the on-state of the ESD protection structure, but when a relatively. high holding voltage is required, p-type devices perform better. Results further demonstrate that HH-LVTSCRs with a multiple-finger layout render high levels of ESD protection per unit area, applicable in the design of ICs with stringent ESD protection requirements of over 15 kV IEC.

Journal Title

Ieee Transactions on Electron Devices

Volume

52

Issue/Number

12

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

2682

Last Page

2689

WOS Identifier

WOS:000233682200021

ISSN

0018-9383

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