SiC super junction power devices: Modeling and analysis

    Authors

    Z. J. Shen; X. Cheng; B. Kang; S. Ko;I. Hshieh

    Comments

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    Keywords

    power devices; super-junction; SiC; wide-band gap semiconductors; Materials Science, Multidisciplinary; Materials Science, ; Characterization & Testing

    Abstract

    In this paper, we extend the super junction concept to SiC high voltage devices and further expand the SiC theoretical limit. It is shown that the super-junction concept can reduce the theoretical specific on-resistance by several times to several orders of magnitude for both silicon and SiC. The unique merit of SiC super-junction devices is that the required P and N pillars have a much smaller aspect ratio and may be easier to form than their silicon counterparts. Furthermore, SiC super-junction devices are much less sensitive to charge imbalance issue than silicon SJ devices.

    Journal Title

    Silicon Carbide and Related Materials 2004

    Volume

    483

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    957

    Last Page

    960

    WOS Identifier

    WOS:000228549600228

    ISSN

    0255-5476; 0-87849-963-6

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