Title

SiC super junction power devices: Modeling and analysis

Authors

Authors

Z. J. Shen; X. Cheng; B. Kang; S. Ko;I. Hshieh

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Keywords

power devices; super-junction; SiC; wide-band gap semiconductors; Materials Science, Multidisciplinary; Materials Science, ; Characterization & Testing

Abstract

In this paper, we extend the super junction concept to SiC high voltage devices and further expand the SiC theoretical limit. It is shown that the super-junction concept can reduce the theoretical specific on-resistance by several times to several orders of magnitude for both silicon and SiC. The unique merit of SiC super-junction devices is that the required P and N pillars have a much smaller aspect ratio and may be easier to form than their silicon counterparts. Furthermore, SiC super-junction devices are much less sensitive to charge imbalance issue than silicon SJ devices.

Journal Title

Silicon Carbide and Related Materials 2004

Volume

483

Publication Date

1-1-2005

Document Type

Article

Language

English

First Page

957

Last Page

960

WOS Identifier

WOS:000228549600228

ISSN

0255-5476; 0-87849-963-6

Share

COinS