Effect of air-pressure on room temperature hydrogen sensing characteristics of nanocrystalline doped tin oxide MEMS-based sensor

    Authors

    S. Shukla; L. Ludwig; H. J. Cho; J. Duarte;S. Seal

    Comments

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    Abbreviated Journal Title

    J. Nanosci. Nanotechnol.

    Keywords

    air-pressure; hydrogen; MEMS; nanocrystalline; sensor; tin oxide; GAS SENSOR; THIN-FILM; INFRASTRUCTURE DEVELOPMENT; STORAGE; FUEL; THICKNESS; CO; Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials; Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter

    Abstract

    Nanocrystalline indium oxide (In2O3)-doped tin oxide (SnO2) thin film sensor has been sol-gel clip-coated on a microelectrochemical system (MEMS) device using 4 sol-gel dip-coating, technique. Hydrogen (H-2) at ppm-level has been successfully detected at room temperature using the present MEMS-based sensor. The room temperature H-2 sensing characteristics (sensitivity, response and recovery time, and recovery rate) of the present MEMS-based sensor has been investigated as a function of air-pressure (50-600 Torr) with, and Without the ultraviolet (UV) radiation exposure. It has been demonstrated that, the concentration of the surface-adsorbed oxygen-ions (which is related to the sensor-resistance in air), the ppm-level H-2 and the oxygen (O-2) partial pressure are the three major factors, which determine the variation in the room temperature H-2 sensing characteristics of the present MEMS-based sensor as a function of air-pressure.

    Journal Title

    Journal of Nanoscience and Nanotechnology

    Volume

    5

    Issue/Number

    11

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    1864

    Last Page

    1874

    WOS Identifier

    WOS:000233534200015

    ISSN

    1533-4880

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