Effects of different laser sources and doping methods used to dope silicon carbide

    Authors

    Z. Tian; I. A. Salama; N. R. Quick;A. Kar

    Comments

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    Abbreviated Journal Title

    Acta Mater.

    Keywords

    silicon carbide; laser doping; Nd : YAG laser; excimer laser; effusion-diffusion process; DIFFUSION; BORON; IMPLANTATION; ALUMINUM; Materials Science, Multidisciplinary; Metallurgy & Metallurgical; Engineering

    Abstract

    An excimer laser and Nd:YAG laser were chosen to dope SiC polytypes by nitrogen (n-type dopant) and aluminum (p-type dopant). In the case of p-type doping, three different doping methods, i.e., (i) doping from trimethylaluminum (TMA) precursor, (ii) an effusion-diffusion process and (iii) doping from Al powder precursor, were used and compared. The results show that Nd:YAG laser treatment provides higher dopant concentration and deeper dopant penetration depth than the excimer laser treatment for both nitrogen and aluminum dopants. This difference is attributed to different heating mechanisms for the two kinds of laser sources. In the case of p-type doping by excimer laser, the Al dopant concentration distributions along the depth of wafer are different for the three doping methods. Method 3 produces the highest Al concentration, which is related to the high concentration of Al due to the formation of a molten aluminum film at the wafer surface. The Al concentration obtained by the effusion-diffusion process (method 2) is higher than that obtained by the TMA precursor method due to a higher Si vacancy concentration created by the effusion process. Shallow and deep junctions fabricated by an excimer laser and a Nd:YAG laser can be used for different semiconductor devices. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

    Journal Title

    Acta Materialia

    Volume

    53

    Issue/Number

    9

    Publication Date

    1-1-2005

    Document Type

    Article

    Language

    English

    First Page

    2835

    Last Page

    2844

    WOS Identifier

    WOS:000229329300032

    ISSN

    1359-6454

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