Hot carrier and soft breakdown effects on LNA performance for ultra wideband communications

    Authors

    E. Xiao; P. P. Ghosh; C. Yu;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    This paper systematically investigates the hot carrier (HC) and soft breakdown (SBD) effects on CMOS low noise amplifier (LNA) for the ultra wide-band (UWB) of 3.1 to 7 GHz. After the MOSFET device RF parameter degradations due to HC and SBD effects are experimentally extracted, the HC and SBD induced performance degradations of the LNA for UWB are evaluated for 0.16 mu m CMOS technology, including s-parameters, noise figure, and stability factor. This work can help RF designers to design more reliable LNA circuits for upcoming UWB applications. (c) 2005 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    45

    Issue/Number

    9-11

    Publication Date

    1-1-2005

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    1382

    Last Page

    1385

    WOS Identifier

    WOS:000232253500020

    ISSN

    0026-2714

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