Title

Hot carrier and soft breakdown effects on LNA performance for ultra wideband communications

Authors

Authors

E. Xiao; P. P. Ghosh; C. Yu;J. S. Yuan

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

This paper systematically investigates the hot carrier (HC) and soft breakdown (SBD) effects on CMOS low noise amplifier (LNA) for the ultra wide-band (UWB) of 3.1 to 7 GHz. After the MOSFET device RF parameter degradations due to HC and SBD effects are experimentally extracted, the HC and SBD induced performance degradations of the LNA for UWB are evaluated for 0.16 mu m CMOS technology, including s-parameters, noise figure, and stability factor. This work can help RF designers to design more reliable LNA circuits for upcoming UWB applications. (c) 2005 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

45

Issue/Number

9-11

Publication Date

1-1-2005

Document Type

Article; Proceedings Paper

Language

English

First Page

1382

Last Page

1385

WOS Identifier

WOS:000232253500020

ISSN

0026-2714

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