Dynamic stress-induced high-frequency noise degradations in nMOSFETs

    Authors

    C. Z. Yu; J. S. Yuan;A. Sadat

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    Device parameter shifts in nMOSFETs subject to inverter-like dynamic voltage stress are examined experimentally. Model equations to relate high-frequency noise to device parameters are given. Dynamic stress-induced degradations in high-frequency noise performance of 0.16 mu m nMOSFETs are investigated. Good agreement between the analytical predictions and experimental data is obtained. Noise performance of a Gilbert mixer is evaluated using Cadence SpectreRF simulation with the measured device model parameters. (c) 2005 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    45

    Issue/Number

    9-11

    Publication Date

    1-1-2005

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    1794

    Last Page

    1799

    WOS Identifier

    WOS:000232253500097

    ISSN

    0026-2714

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