Laser forming of silicon films using nanoparticle precursor

    Authors

    S. Bet;A. Kar

    Comments

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    Abbreviated Journal Title

    J. Electron. Mater.

    Keywords

    silicon nanoparticles; laser crystallization; SEM; differential scanning; calorimetry (DSC); Raman spectroscopy; laser doping; Schottky diode; THIN-FILMS; AMORPHOUS-SILICON; INDUCED CRYSTALLIZATION; MOLECULAR-DYNAMICS; SURFACE-AREA; NICKEL; TEMPERATURE; COALESCENCE; PARTICLE; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied

    Abstract

    Polycrystalline silicon films containing cubic silicon crystallites of size 3-4 mu m have been formed on nickel substrates by fusing and sintering silicon nanoparticle precursors using a laser. A mechanism for the fusion and sintering of these nanoparticles, resulting in reduced heat input and continuous film formation by surface and grain boundary diffusion, is discussed. Films were characterized by optical microscopy, scanning electron microscopy, energy-dispersive spectroscopy, and Raman spectroscopy. Films were doped with n- as well as p-type dopants by using a laser doping technique and their current-voltage (I-V) characteristics were measured.

    Journal Title

    Journal of Electronic Materials

    Volume

    35

    Issue/Number

    5

    Publication Date

    1-1-2006

    Document Type

    Article

    Language

    English

    First Page

    993

    Last Page

    1004

    WOS Identifier

    WOS:000237893100028

    ISSN

    0361-5235

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