Title

Laser forming of silicon films using nanoparticle precursor

Authors

Authors

S. Bet;A. Kar

Comments

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Abbreviated Journal Title

J. Electron. Mater.

Keywords

silicon nanoparticles; laser crystallization; SEM; differential scanning; calorimetry (DSC); Raman spectroscopy; laser doping; Schottky diode; THIN-FILMS; AMORPHOUS-SILICON; INDUCED CRYSTALLIZATION; MOLECULAR-DYNAMICS; SURFACE-AREA; NICKEL; TEMPERATURE; COALESCENCE; PARTICLE; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied

Abstract

Polycrystalline silicon films containing cubic silicon crystallites of size 3-4 mu m have been formed on nickel substrates by fusing and sintering silicon nanoparticle precursors using a laser. A mechanism for the fusion and sintering of these nanoparticles, resulting in reduced heat input and continuous film formation by surface and grain boundary diffusion, is discussed. Films were characterized by optical microscopy, scanning electron microscopy, energy-dispersive spectroscopy, and Raman spectroscopy. Films were doped with n- as well as p-type dopants by using a laser doping technique and their current-voltage (I-V) characteristics were measured.

Journal Title

Journal of Electronic Materials

Volume

35

Issue/Number

5

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

993

Last Page

1004

WOS Identifier

WOS:000237893100028

ISSN

0361-5235

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