Present status and future prospects of CIGSS thin film solar cells

    Authors

    N. G. Dhere

    Comments

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    Abbreviated Journal Title

    Sol. Energy Mater. Sol. Cells

    Keywords

    CIGSS solar cells; technologies; efficiency; CU(IN, GA)SE-2; POLYCRYSTALLINE; PERFORMANCE; TEXTURE; DEVICE; Energy & Fuels; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    Efficiencies of CuIn1-xGaxSe2-ySy (CIGSS) modules are comparable to those of lower end crystalline-Si modules. CIGSS layers are prepared by reactive co-evaporation, selenization/sulfurization of metallic or compound precursors, reactive co-sputtering and non-vacuum techniques. CuIn1-xGaxS2 (CIGS2) layers are prepared by sulfurization of Cu-rich metallic precursors and etching of excess Cu2-xS. Usually heterojunction partner CdS and transparent-conducting bilayer ZnO/ZnO:Al layers are deposited by chemical bath deposition (CBD) or RF magnetron sputtering. CIGSS solar cell efficiencies have been improved by optimizing Cu, Ga and S proportions and providing a minute amount of Na. This paper reviews preparation and efficiency improvement techniques for CIGSS solar cells. (c) 2006 Elsevier B.V. All rights reserved.

    Journal Title

    Solar Energy Materials and Solar Cells

    Volume

    90

    Issue/Number

    15

    Publication Date

    1-1-2006

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    2181

    Last Page

    2190

    WOS Identifier

    WOS:000239054000003

    ISSN

    0927-0248

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