Title
An improved junction capacitance model for junction field-effect transistors
Abbreviated Journal Title
Solid-State Electron.
Keywords
compact modeling; junction capacitance; junction field-effect transistor; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
A new junction capacitance model for the four-terminal junction field-effect transistor (JFET) is presented. With a single expression, the model, which is valid for different temperatures and a wide range of bias conditions, describes correctly the JFET junction capacitance behavior and capacitance drop-off phenomenon. The model has been verified using experimental data measured at Texas Instruments. (c) 2006 Elsevier Ltd. All rights reserved.
Journal Title
Solid-State Electronics
Volume
50
Issue/Number
7-8
Publication Date
1-1-2006
Document Type
Article
Language
English
First Page
1395
Last Page
1399
WOS Identifier
ISSN
0038-1101
Recommended Citation
"An improved junction capacitance model for junction field-effect transistors" (2006). Faculty Bibliography 2000s. 6082.
https://stars.library.ucf.edu/facultybib2000/6082
Comments
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