Title

An improved junction capacitance model for junction field-effect transistors

Authors

Authors

H. Ding; J. J. Liou; C. R. Cirba;K. Green

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

compact modeling; junction capacitance; junction field-effect transistor; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

A new junction capacitance model for the four-terminal junction field-effect transistor (JFET) is presented. With a single expression, the model, which is valid for different temperatures and a wide range of bias conditions, describes correctly the JFET junction capacitance behavior and capacitance drop-off phenomenon. The model has been verified using experimental data measured at Texas Instruments. (c) 2006 Elsevier Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

50

Issue/Number

7-8

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

1395

Last Page

1399

WOS Identifier

WOS:000240668200037

ISSN

0038-1101

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