Investigation of diode geometry and metal line pattern for robust ESD protection applications

    Authors

    Y. Li; J. J. Liou;J. Vinson

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    The effect of different diode geometries and metal patterns on the failure current It2 is investigated experimentally. The devices considered are N+/P well LOCOS diodes having different lengths, widths, finger numbers, and metal connections. The results provide useful insights into optimizing the diode for robust electrostatic discharge (ESD) protection applications. (C) 2008 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    48

    Issue/Number

    10

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    1660

    Last Page

    1663

    WOS Identifier

    WOS:000259844900007

    ISSN

    0026-2714

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