Authors

W. Lim; D. P. Norton; S. J. Pearton; X. J. Wang; W. M. Chen; I. A. Buyanova; A. Osinsky; J. W. Dong; B. Hertog; A. V. Thompson; W. V. Schoenfeld; Y. L. Wang;F. Ren

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

ZINC-OXIDE; THIN-FILMS; GROWN ZNO; HYDROGEN; EPITAXY; Physics, Applied

Abstract

ZnO/ZnCdO/ZnO multiple quantum well samples grown on sapphire substrates by molecular beam epitaxy and annealed in situ were exposed to D(2) plasmas at 150 degrees C. The deuterium showed migration depths of similar to 0.8 mu m for 30 min plasma exposures, with accumulation of (2)H in the ZnCdO wells. The photoluminescence (PL) intensity from the samples was increased by factors of 5 at 5 K and similar to 20 at 300 K as a result of the deuteration, most likely due to passivation of competing nonradiative centers. Annealing up to 300 degrees C led to increased migration of (2)H toward the substrate but no loss of deuterium from the sample and little change in the PL intensity. The initial PL intensities were restored by annealing at > = 400 degrees C as (2)H was evolved from the sample (similar to 90% loss by 500 degrees C). By contrast, samples without in situ annealing showed a decrease in PL intensity with deuteration. This suggests that even moderate annealing temperatures lead to degradation of ZnCdO quantum wells. (c) 2008 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

92

Issue/Number

3

Publication Date

1-1-2008

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000252718600026

ISSN

0003-6951

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