Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices

    Authors

    C. S. Ho; Y. C. Lo; Y. H. Chang;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    LDD MOSFETS; DRAIN RESISTANCE; TEMPERATURE; VOLTAGE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    In this paper, an improved method for determining the gate-bias dependent source and drain series resistances R-D and effective channel length L-eff = L-M - Delta L (L-M is the mask channel length and Delta L is the channel length reduction) of advanced MOS devices is developed for the purpose of providing a better accuracy for the modeling of the current voltage characteristics of LED MOSFETs operating from 25 to 120 degrees C. Our results show that both Delta L and R-SD decrease with increasing gate-bias, but increase with increasing temperature. In addition, the gate-bias dependence of Delta L and R-SD becomes weaker as the temperature rises. Experimental data obtained from devices fabricated using the 0.14 and 0.09 mu m DRAM technologies are included in support of the theoretical work developed. (c) 2006 Elsevier Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    50

    Issue/Number

    11-12

    Publication Date

    1-1-2006

    Document Type

    Article

    Language

    English

    First Page

    1774

    Last Page

    1779

    WOS Identifier

    WOS:000243272000018

    ISSN

    0038-1101

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