Optimum dopant content of n-type 95% Bi2Te3+5% Bi2Se3 compounds fabricated by gas atomization and extrusion process

    Authors

    S. J. Hong; Y. S. Lee; J. W. Byeon;B. S. Chun

    Comments

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    Abbreviated Journal Title

    J. Alloy. Compd.

    Keywords

    Bi2Te3 semiconductors; powder metallurgy; X-ray diffraction; anisotropy; thermal analysis; THERMOELECTRIC PROPERTIES; MICROSTRUCTURE; ALLOY; Chemistry, Physical; Materials Science, Multidisciplinary; Metallurgy &; Metallurgical Engineering

    Abstract

    The n-type (Bi2Te3-Bi2Se3) compound was newly fabricated by gas atomization and hot extrusion, which is considered to be a mass production technique of this alloy. The aim of this research is to analyze the effect of the amount of dopant on the thermoelectric properties for n-type 95% Bi2Te3 + 5% Bi2Se3 compounds. The microstructure of extruded bar shows homogeneous and fine distribution of grains through full length due to dynamic recrystallizaiton during hot extrusion. The absolute values of Seebeck coefficient for the compounds doped 0.02, 0.04, 0.07 and 0.1 wt.% SbI3 are 219.9, 175, 147.7 and 146.7 mu V/K, respectively. The electrical resistivity (p) is highest at 0.02 wt.% SbI3, while lowest is at 0. 1 wt.% SbI3. The compound with 0.04 wt.% SbI3 shows the highest power factor among the four; different dopant contents because of the relative high Seebeck coefficient and the low electrical resistivity. (c) 2005 Elsevier B.V. All rights reserved.

    Journal Title

    Journal of Alloys and Compounds

    Volume

    414

    Issue/Number

    1-2

    Publication Date

    1-1-2006

    Document Type

    Article

    Language

    English

    First Page

    146

    Last Page

    151

    WOS Identifier

    WOS:000236955900027

    ISSN

    0925-8388

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