InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability

    Authors

    X. Liu; J. S. Yuan;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    BASE; CURRENTS; STRESS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effect on the amplifier's RF performance. The SPICE Gummel-Poon (SGP) model parameters were extracted from the pre- and post-stress HBT data and used in Cadence SpectreRF simulation. The amplifier's post-stress RF characteristics, such as the Output Power and power-added efficiency (PAE), remained almost unchanged even though the post-stress HBT's DC current gain had dropped to 73.6% of its initial value. (c) 2008 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    48

    Issue/Number

    8-9

    Publication Date

    1-1-2008

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    1212

    Last Page

    1215

    WOS Identifier

    WOS:000260347000021

    ISSN

    0026-2714

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