Novel silicon-controlled rectifier (SCR) for high-voltage electrostatic discharge (ESD) applications

    Authors

    Z. W. Liu; J. J. Liou;J. Vinson

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    electrostatic discharge (ESD); holding voltage; latchup immunity; transmission line pulsing (TLP); Engineering, Electrical & Electronic

    Abstract

    Electrostatic discharge (ESD) protection, for high-voltage integrated circuits is challenging due to the requirement of high holding voltage to minimize the risk of ESD-induced latchup and electrical overstress. In this letter, a new silicon-controlled rectifier (SCR) is developed for this particular application. The SCR is designed based on the concept that the holding voltage can be increased by reducing the emitter injection efficiency in the SCR. This is accomplished by using a segmented emitter topology. Experimental data show that the new SCR can possess a holding voltage that is larger than 40 V and a failure current I(t2) that is higher than 28 mA/mu m.

    Journal Title

    Ieee Electron Device Letters

    Volume

    29

    Issue/Number

    7

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    753

    Last Page

    755

    WOS Identifier

    WOS:000257626000031

    ISSN

    0741-3106

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