An improved bidirectional SCR structure for low-triggering ESD protection applications

    Authors

    Z. W. Liu; J. Vinson; L. F. Lou;J. J. Liou

    Comments

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    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    bidirectional electrostatic discharge (ESD) protection; holding voltage; latch-up immunity; triggering voltage; Engineering, Electrical & Electronic

    Abstract

    An improved dual-polarity silicon-controlled rectifier (SCR) device has been proposed and realized in a 0.6-mu m bipolar complementary metal-oxide-semiconductor process. The device can be used to protect electrostatic discharge (ESD) in both the positive and negative directions on pins with a voltage range that goes below ground. Comparing with the conventional bidirectional SCR structures, the new device is more suitable for low-voltage integrated circuit ESD protection applications because it possesses a smaller trigger voltage, a smaller leakage current, and a larger holding voltage.

    Journal Title

    Ieee Electron Device Letters

    Volume

    29

    Issue/Number

    4

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    360

    Last Page

    362

    WOS Identifier

    WOS:000254225800025

    ISSN

    0741-3106

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