Title

Properties of isotype n-ZnO/n-GaN heterostructures studied by I-V-T and electron beam induced current methods

Authors

Authors

Y. I. Alivov; B. Xiao; S. Akarca-Biyikli; Q. Fan; H. Morkoc; D. Johnstone; O. Lopatiuk-Tirpak; L. Chernyak;W. Litton

Comments

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Abbreviated Journal Title

J. Phys.-Condes. Matter

Keywords

LIGHT-EMITTING-DIODES; P-TYPE GAN; MINORITY-CARRIER TRANSPORT; CHEMICAL-VAPOR-DEPOSITION; OHMIC CONTACTS; DOPED GAN; ELECTROLUMINESCENCE; FABRICATION; ALGAN; Physics, Condensed Matter

Abstract

Electrical properties of isotype n-ZnO/n-GaN heterostructures obtained by radio-frequency sputtering of ZnO films on GaN layers are studied by means of temperature dependent current-voltage (I-V-T) characterization and electron beam induced current (EBIC) measurements. The n-ZnO/n-GaN diodes showed highly rectifying behavior with a forward and reverse current ratio of about 10(6) at +/- 5 V. From the analysis of I-V-T measurements, a conduction band offset of similar to 0.62 eV was derived. From EBIC measurements, the minority carrier diffusion length of ZnO was estimated to lie in the range 0.125-0.175 mu m, while an activation energy was derived as 0.462 +/- 0.073 V and was attributed to the traps.

Journal Title

Journal of Physics-Condensed Matter

Volume

20

Issue/Number

8

Publication Date

1-1-2008

Document Type

Article

Language

English

First Page

4

WOS Identifier

WOS:000254100700005

ISSN

0953-8984

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