Properties of isotype n-ZnO/n-GaN heterostructures studied by I-V-T and electron beam induced current methods

    Authors

    Y. I. Alivov; B. Xiao; S. Akarca-Biyikli; Q. Fan; H. Morkoc; D. Johnstone; O. Lopatiuk-Tirpak; L. Chernyak;W. Litton

    Comments

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    Abbreviated Journal Title

    J. Phys.-Condes. Matter

    Keywords

    LIGHT-EMITTING-DIODES; P-TYPE GAN; MINORITY-CARRIER TRANSPORT; CHEMICAL-VAPOR-DEPOSITION; OHMIC CONTACTS; DOPED GAN; ELECTROLUMINESCENCE; FABRICATION; ALGAN; Physics, Condensed Matter

    Abstract

    Electrical properties of isotype n-ZnO/n-GaN heterostructures obtained by radio-frequency sputtering of ZnO films on GaN layers are studied by means of temperature dependent current-voltage (I-V-T) characterization and electron beam induced current (EBIC) measurements. The n-ZnO/n-GaN diodes showed highly rectifying behavior with a forward and reverse current ratio of about 10(6) at +/- 5 V. From the analysis of I-V-T measurements, a conduction band offset of similar to 0.62 eV was derived. From EBIC measurements, the minority carrier diffusion length of ZnO was estimated to lie in the range 0.125-0.175 mu m, while an activation energy was derived as 0.462 +/- 0.073 V and was attributed to the traps.

    Journal Title

    Journal of Physics-Condensed Matter

    Volume

    20

    Issue/Number

    8

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    4

    WOS Identifier

    WOS:000254100700005

    ISSN

    0953-8984

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