Diffusion behavior of implanted Li ions in GaN thin films studied by secondary ion mass spectrometry

    Authors

    F. Salman; L. Chow; B. Chai;F. A. Stevie

    Comments

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    Abbreviated Journal Title

    Mater. Sci. Semicond. Process

    Keywords

    GaN; diffusion; SIMS; NITRIDE; SILICON; GROWTH; DIODES; GAAS; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

    Abstract

    Lithium ions with dosages of 2.6 x 10(12), 2.6 x 10(13), 2.6 x 10(14), and 2.6 x 10(15) cm(-2) have been implanted into a GaN thin film grown on sapphire substrates. The diffusion behavior of these implanted Li ions in GaN thin film at different temperature anneals was studied using secondary ion mass spectrometry. In general, the diffusion profiles show relatively little movement of Li in the GaN thin film for temperatures up to 700 degrees C. At low-temperature anneals (< 500 degrees C), up-hill diffusion dominated the Li profiles and at high-temperature anneals ( > 800 degrees C), out-diffusion dominated the Li profiles. (c) 2006 Elsevier Ltd. All rights reserved.

    Journal Title

    Materials Science in Semiconductor Processing

    Volume

    9

    Issue/Number

    1-3

    Publication Date

    1-1-2006

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    375

    Last Page

    379

    WOS Identifier

    WOS:000238805900079

    ISSN

    1369-8001

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