Title

Diffusion behavior of implanted Li ions in GaN thin films studied by secondary ion mass spectrometry

Authors

Authors

F. Salman; L. Chow; B. Chai;F. A. Stevie

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Mater. Sci. Semicond. Process

Keywords

GaN; diffusion; SIMS; NITRIDE; SILICON; GROWTH; DIODES; GAAS; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

Abstract

Lithium ions with dosages of 2.6 x 10(12), 2.6 x 10(13), 2.6 x 10(14), and 2.6 x 10(15) cm(-2) have been implanted into a GaN thin film grown on sapphire substrates. The diffusion behavior of these implanted Li ions in GaN thin film at different temperature anneals was studied using secondary ion mass spectrometry. In general, the diffusion profiles show relatively little movement of Li in the GaN thin film for temperatures up to 700 degrees C. At low-temperature anneals (< 500 degrees C), up-hill diffusion dominated the Li profiles and at high-temperature anneals ( > 800 degrees C), out-diffusion dominated the Li profiles. (c) 2006 Elsevier Ltd. All rights reserved.

Journal Title

Materials Science in Semiconductor Processing

Volume

9

Issue/Number

1-3

Publication Date

1-1-2006

Document Type

Article; Proceedings Paper

Language

English

First Page

375

Last Page

379

WOS Identifier

WOS:000238805900079

ISSN

1369-8001

Share

COinS