Diffusion profiles of low dosages chromium ions implanted into (100) crystalline silicon

    Authors

    F. Salman; P. Zhang; L. Chow;F. A. Stevie

    Comments

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    Abbreviated Journal Title

    Mater. Sci. Semicond. Process

    Keywords

    Cr; Si; SIMS; diffusion; ion implantation; COMPLEXES; COPPER; SOLUBILITY; IRON; SI; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

    Abstract

    Chromium ions with low dosages (1 x 10(12) and 1 x 10(13) cm(-2)) are implanted into silicon (100) crystalline substrates. Thermal anneals were carried out at different temperatures between 300 and 1000 degrees C to study the effects of ion implantation dose on the Cr diffusion profiles. Secondary ion mass spectrometry (SIMS) has been used to characterize the profiles of the Cr impurities. At 1 x 10(12) cm(-2) dosage and 500 degrees C anneal, the diffusivity of Cr in Silicon is determined to be 1.0 x 10(-14) cm(2) s(-1). (c) 2006 Elsevier Ltd. All rights reserved.

    Journal Title

    Materials Science in Semiconductor Processing

    Volume

    9

    Issue/Number

    1-3

    Publication Date

    1-1-2006

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    62

    Last Page

    65

    WOS Identifier

    WOS:000238805900014

    ISSN

    1369-8001

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