Title

Diffusion profiles of low dosages chromium ions implanted into (100) crystalline silicon

Authors

Authors

F. Salman; P. Zhang; L. Chow;F. A. Stevie

Comments

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Abbreviated Journal Title

Mater. Sci. Semicond. Process

Keywords

Cr; Si; SIMS; diffusion; ion implantation; COMPLEXES; COPPER; SOLUBILITY; IRON; SI; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

Abstract

Chromium ions with low dosages (1 x 10(12) and 1 x 10(13) cm(-2)) are implanted into silicon (100) crystalline substrates. Thermal anneals were carried out at different temperatures between 300 and 1000 degrees C to study the effects of ion implantation dose on the Cr diffusion profiles. Secondary ion mass spectrometry (SIMS) has been used to characterize the profiles of the Cr impurities. At 1 x 10(12) cm(-2) dosage and 500 degrees C anneal, the diffusivity of Cr in Silicon is determined to be 1.0 x 10(-14) cm(2) s(-1). (c) 2006 Elsevier Ltd. All rights reserved.

Journal Title

Materials Science in Semiconductor Processing

Volume

9

Issue/Number

1-3

Publication Date

1-1-2006

Document Type

Article; Proceedings Paper

Language

English

First Page

62

Last Page

65

WOS Identifier

WOS:000238805900014

ISSN

1369-8001

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