Investigation of oxygen annealing effects on RF sputter deposited SiC thin films

    Authors

    R. M. Todi; K. B. Sundaram; A. P. Warren;K. Scammon

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    SiC; XPS; oxidation; RAY PHOTOELECTRON-SPECTROSCOPY; CHEMICAL-VAPOR-DEPOSITION; SILICON-CARBIDE; STRUCTURAL CHARACTERIZATION; OXIDATION; INTERFACES; OXIDE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Amorphous silicon carbide films were deposited by RF sputtering technique using a SiC target. These films were annealed in dry oxygen ambient in the temperature range of 400-700 degrees C. Subsequently the films were characterized using X-ray photoelectron spectroscopy (XPS) to investigate the chemical composition at each annealing temperature. XPS indicated that increasing the anneal temperature results in a decrease in SiC phase, and an increase in SiO(x). Surface morphology of the oxidized films was characterized using atomic force microscope. Optical absorption studies indicated blue shifting effects as the annealing temperature was increased. (c) 2006 Elsevier Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    50

    Issue/Number

    7-8

    Publication Date

    1-1-2006

    Document Type

    Article

    Language

    English

    First Page

    1189

    Last Page

    1193

    WOS Identifier

    WOS:000240668200005

    ISSN

    0038-1101

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