Title

Investigation of oxygen annealing effects on RF sputter deposited SiC thin films

Authors

Authors

R. M. Todi; K. B. Sundaram; A. P. Warren;K. Scammon

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

SiC; XPS; oxidation; RAY PHOTOELECTRON-SPECTROSCOPY; CHEMICAL-VAPOR-DEPOSITION; SILICON-CARBIDE; STRUCTURAL CHARACTERIZATION; OXIDATION; INTERFACES; OXIDE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Amorphous silicon carbide films were deposited by RF sputtering technique using a SiC target. These films were annealed in dry oxygen ambient in the temperature range of 400-700 degrees C. Subsequently the films were characterized using X-ray photoelectron spectroscopy (XPS) to investigate the chemical composition at each annealing temperature. XPS indicated that increasing the anneal temperature results in a decrease in SiC phase, and an increase in SiO(x). Surface morphology of the oxidized films was characterized using atomic force microscope. Optical absorption studies indicated blue shifting effects as the annealing temperature was increased. (c) 2006 Elsevier Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

50

Issue/Number

7-8

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

1189

Last Page

1193

WOS Identifier

WOS:000240668200005

ISSN

0038-1101

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