X-ray photoelectron spectroscopy analysis of oxygen annealed radio frequency sputter deposited SiCN thin films

    Authors

    R. M. Todi; A. P. Warren; K. B. Sundaram;K. R. Coffey

    Comments

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    Abbreviated Journal Title

    J. Electrochem. Soc.

    Keywords

    NITROGEN; CARBON; INTERFACES; RESONANCE; HYDROGEN; OXIDE; XPS; Electrochemistry; Materials Science, Coatings & Films

    Abstract

    Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputtering system using a sintered SiC target. Films with various compositions were deposited onto silicon substrate by changing the N-2/Ar gas ratios during sputtering. These films were annealed in dry oxygen ambient in the temperature range of 400-900 degrees C. Subsequently these annealed films were characterized using X-ray photoelectron spectroscopy to investigate the chemical composition and oxidation kinetics at each annealing temperature. The results indicated that the oxidation of films was more gradual for the samples deposited with no nitrogen compared to the ones deposited with nitrogen. (c) 2006 The Electrochemical Society.

    Journal Title

    Journal of the Electrochemical Society

    Volume

    153

    Issue/Number

    7

    Publication Date

    1-1-2006

    Document Type

    Article

    Language

    English

    First Page

    G640

    Last Page

    G643

    WOS Identifier

    WOS:000237945300066

    ISSN

    0013-4651

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