Channel hot-electron degradation on 60-nm HfO2-gated nMOSFET DC and RF performances

    Authors

    C. Z. Yu; J. S. Yuan;J. Suehle

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    flicker noise; hafnium dioxide; high-k dielectric; linearity; noise; figure; RF; RF circuit reliability; S-parameters; CHEMICAL-VAPOR-DEPOSITION; HFO2 GATE DIELECTRICS; THIN-FILMS; SILICON; RELAXATION; DEPENDENCE; STABILITY; THICKNESS; MOSFETS; STACKS; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Channel hot-carrier-induced dc and RF performance degradations in 60-nm high-k nMOSFETs are examined experimentally. RF performances such as the cutoff frequency, noise figure, linearity, and flicker noise of high-k MOSFETs show significant vulnerability to the hot-electron effect. Analytical equations for normalized RF degradations relating to the device dc and ac parameters are derived. Good agreement between the analytical predictions and experimental data is obtained. The accuracy of the model equations suggests fast and effective evaluation of noise figure and linearity degradations using simple dc and ac parameters directly.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    53

    Issue/Number

    5

    Publication Date

    1-1-2006

    Document Type

    Article

    Language

    English

    First Page

    1065

    Last Page

    1072

    WOS Identifier

    WOS:000237369800013

    ISSN

    0018-9383

    Share

    COinS