Title

Channel hot-electron degradation on 60-nm HfO2-gated nMOSFET DC and RF performances

Authors

Authors

C. Z. Yu; J. S. Yuan;J. Suehle

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

flicker noise; hafnium dioxide; high-k dielectric; linearity; noise; figure; RF; RF circuit reliability; S-parameters; CHEMICAL-VAPOR-DEPOSITION; HFO2 GATE DIELECTRICS; THIN-FILMS; SILICON; RELAXATION; DEPENDENCE; STABILITY; THICKNESS; MOSFETS; STACKS; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Channel hot-carrier-induced dc and RF performance degradations in 60-nm high-k nMOSFETs are examined experimentally. RF performances such as the cutoff frequency, noise figure, linearity, and flicker noise of high-k MOSFETs show significant vulnerability to the hot-electron effect. Analytical equations for normalized RF degradations relating to the device dc and ac parameters are derived. Good agreement between the analytical predictions and experimental data is obtained. The accuracy of the model equations suggests fast and effective evaluation of noise figure and linearity degradations using simple dc and ac parameters directly.

Journal Title

Ieee Transactions on Electron Devices

Volume

53

Issue/Number

5

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

1065

Last Page

1072

WOS Identifier

WOS:000237369800013

ISSN

0018-9383

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