Authors

L. G. Zhang; W. Y. Yang; H. Jin; Z. H. Zheng; Z. P. Xie; H. Z. Miao;L. N. An

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

CHEMICAL-VAPOR-DEPOSITION; SILICON-CARBIDE; VISIBLE PHOTOLUMINESCENCE; ROOM-TEMPERATURE; BLUE EMISSION; SI; FILMS; POLARIZATION; NANOCRYSTALS; Physics, Applied

Abstract

An intensive sharp photoluminescence at 3.3 eV is observed from single-crystal 3C-SiC nanorods. Structural characterization reveals that the nanorods contain a fairly large amount of threefold stacking faults. We tentatively attribute the emission to these stalking faults, which structurally resemble 6H-SiC nano-layers of 1.5 nm embedded in a 3C-SiC matrix. The emission mechanism is discussed in terms of spontaneous polarization at the stacking faults.

Journal Title

Applied Physics Letters

Volume

89

Issue/Number

14

Publication Date

1-1-2006

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000241056900091

ISSN

0003-6951

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