Hybrid II-VI and III-V compound double heterostructures and their properties

    Authors

    Y. I. Alivov; U. Ozgur; X. Gu; C. Liu; Y. Moon; H. Morkoc; O. Lopatiuk; L. Chernyak;C. W. Litton

    Comments

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    Abbreviated Journal Title

    J. Electron. Mater.

    Keywords

    zinc oxide (ZnO); gallium nitride (GaN); heterostructures; photoluminescence (PL); electroluminescence (EL); scanning electron; microscopy (SEM); LIGHT-EMITTING-DIODES; BLUE; ULTRAVIOLET; GAN; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied

    Abstract

    In this report, n-GaN/n-ZnO/p-GaN double heterostructures (DHs) were grown on sapphire substrate employing metal-organic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE) methods. Scanning electron microscopy (SEM) employed in both secondary electron (SE) and cathodoluminescence (CL) modes revealed high crystal and optical quality of the DH layers, indicating no significant interdiffusion of constituent elements during growth. The diode structures were fabricated whose current-voltage characteristics revealed rectifying behavior with a leakage current 2.12 x 10(-5) A and a forward current 7.8 x 10(-2) A at 10 V bias, and with threshold and breakdown voltages of 3.2 and -11 V , respectively. Under forward bias, an intense electroluminescence (EL) was observed, the spectrum of which depended on the injection current.

    Journal Title

    Journal of Electronic Materials

    Volume

    36

    Issue/Number

    4

    Publication Date

    1-1-2007

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    409

    Last Page

    413

    WOS Identifier

    WOS:000246861600023

    ISSN

    0361-5235

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