Abstract
We report on the demonstration of light emission from hybrid CdZnO quantum-well light emitting diodes. A one-dimensional drift-diffusion method was used to model the expected band structure and carrier injection in the device, demonstrating the potential for 90% internal quantum efficiency when a CdZnO quantum well is used. Fabricated devices produced visible electroluminescence that was found to redshift from 3.32 to 3.15 eV as the forward current was increased from 20 to 40 mA. A further increase in the forward current to 50 mA resulted in a saturation of the redshift.
Journal Title
Journal of Applied Physics
Volume
104
Issue/Number
9
Publication Date
1-1-2008
Document Type
Article
DOI Link
WOS Identifier
ISSN
0021-8979
Recommended Citation
Mares, J. W.; Falanga, M.; Thompson, A. V.; Osinsky, A.; Xie, J. Q.; Hertog, B.; Dabiran, A.; Chow, P. P.; Karpov, S.; and Schoenfeld, W. V., "Hybrid CdZnO/GaN quantum-well light emitting diodes" (2008). Faculty Bibliography 2000s. 684.
https://stars.library.ucf.edu/facultybib2000/684
Comments
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