Title

Gamma radiation induced degradation of operating quantum dot lasers

Authors

Authors

J. W. Mares; J. Harben; A. V. Thompson; D. W. Schoenfeld;W. V. Schoenfeld

Comments

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Abbreviated Journal Title

IEEE Trans. Nucl. Sci.

Keywords

gamma-ray effects; quantum dots; semiconductor device radiation effects; semiconductor lasers; SURFACE-EMITTING LASERS; PROTON IRRADIATION; DISPLACEMENT DAMAGE; LUMINESCENCE EMISSION; CARRIER DYNAMICS; DIODES; SEMICONDUCTORS; 1.3-MU-M; RAYS; Engineering, Electrical & Electronic; Nuclear Science & Technology

Abstract

The degradation of quantum dot lasers (QDLs) due to 1.17 and 1.22 MeV gamma radiation is characterized by changes in. threshold current, external slope efficiency and light output. Both operating and non-operating lasers were exposed to a Co-60 source, providing gamma radiation at a dose rate of 0.4 kGy/hr to a total absorbed dose of 1.6 MGy. Degradation rates of exposed, non-operating QDLs were found to be more rapid than for operating QDLs during exposure, suggesting competition between radiation damage effects and annealing effects induced by operation. This is supported by annealing effects exhibited by unexposed, operating lasers resulting in increases in slope efficiency and light output. Differential output power comparisons indicate that degradation is predominately due to changes in current injection efficiency and not increases in non-radiative recombination in the active region.

Journal Title

Ieee Transactions on Nuclear Science

Volume

55

Issue/Number

2

Publication Date

1-1-2008

Document Type

Article

Language

English

First Page

763

Last Page

768

WOS Identifier

WOS:000254888500016

ISSN

0018-9499

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