Gamma radiation induced degradation of operating quantum dot lasers

    Authors

    J. W. Mares; J. Harben; A. V. Thompson; D. W. Schoenfeld;W. V. Schoenfeld

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Nucl. Sci.

    Keywords

    gamma-ray effects; quantum dots; semiconductor device radiation effects; semiconductor lasers; SURFACE-EMITTING LASERS; PROTON IRRADIATION; DISPLACEMENT DAMAGE; LUMINESCENCE EMISSION; CARRIER DYNAMICS; DIODES; SEMICONDUCTORS; 1.3-MU-M; RAYS; Engineering, Electrical & Electronic; Nuclear Science & Technology

    Abstract

    The degradation of quantum dot lasers (QDLs) due to 1.17 and 1.22 MeV gamma radiation is characterized by changes in. threshold current, external slope efficiency and light output. Both operating and non-operating lasers were exposed to a Co-60 source, providing gamma radiation at a dose rate of 0.4 kGy/hr to a total absorbed dose of 1.6 MGy. Degradation rates of exposed, non-operating QDLs were found to be more rapid than for operating QDLs during exposure, suggesting competition between radiation damage effects and annealing effects induced by operation. This is supported by annealing effects exhibited by unexposed, operating lasers resulting in increases in slope efficiency and light output. Differential output power comparisons indicate that degradation is predominately due to changes in current injection efficiency and not increases in non-radiative recombination in the active region.

    Journal Title

    Ieee Transactions on Nuclear Science

    Volume

    55

    Issue/Number

    2

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    763

    Last Page

    768

    WOS Identifier

    WOS:000254888500016

    ISSN

    0018-9499

    Share

    COinS