Laser-doping of silicon carbide for p-n junction and LED fabrication

    Authors

    S. Bet; N. Quick;A. Kar

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Phys. Status Solidi A-Appl. Mat.

    Keywords

    LIGHT-EMITTING-DIODES; QUANTUM EFFICIENCY; Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    The high melting point and the limited diffusion of impurities in silicon carbide have greatly restricted the use of conventional ion implantation and furnace to incorporate and activate dopants. A laser doping technique overcomes these obstacles for doping silicon carbide and other wide band gap semiconductors. This paper presents the work on fabrication of p-n junction diodes and blue light emitting diodes using laser doping technique. A p-n junction was created by laser doping a silicon carbide wafer with aluminum (p-type) and nitrogen (n-type). Optical interferometer profilometer scan showed that there was no damage on the surface post laser doping. Secondary ion mass spectrometry (SIMS) was carried to estimate the dopant concentration and depth. The effects of laser doping on the current-voltage characteristics were studied. The junctions were characterized by capacitance-voltage and electroluminescence measurements. A broad electroluminescence peak was observed around 498.8 nm wavelength, characterizing the p-n junction as a blue light-emitting diode. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

    Journal Title

    Physica Status Solidi a-Applications and Materials Science

    Volume

    204

    Issue/Number

    4

    Publication Date

    1-1-2007

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    1147

    Last Page

    1157

    WOS Identifier

    WOS:000246194800035

    ISSN

    0031-8965

    Share

    COinS