A robust polysilicon-assisted SCR in ESD protection application

    Authors

    Q. Cui; Y. Han; S. R. Dong;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    J. Zhejiang Univ.-SCI A

    Keywords

    electro-static discharge (ESD); silicon-controlled rectifier (SCR); robustness performance; polysilicon-assisted; human body model (HBM); LATCH-UP; DESIGN; DEVICES; ICS; Engineering, Multidisciplinary; Multidisciplinary Sciences; Physics, ; Applied

    Abstract

    A novel polysilicon-assisted silicon-controlled rectifier (SCR) is presented and analyzed in this paper, which is fabricated in HHNEC's 0.18 mu m EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help by pass electro-static discharge (ESD) current without occupying extra layout area. TLP current-voltage (I-V) measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR's. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 mu m(2) layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area.

    Journal Title

    Journal of Zhejiang University-Science A

    Volume

    8

    Issue/Number

    12

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    1879

    Last Page

    1883

    WOS Identifier

    WOS:000251410600001

    ISSN

    1673-565X

    Share

    COinS