Evaluation of RF capacitance extraction for ultrathin ultraleaky SOI MOS devices

    Authors

    C. Yu; J. Zhang; J. S. Yuan; F. Duan; S. K. Jayanarananan; A. Marathe; S. Cooper; V. Pham;J. S. Goo

    Comments

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    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    capacitance measurement; inversion oxide thickness; leakage current; radio frequency (RF; S-parameter; VOLTAGE CHARACTERISTICS; HIGH LEAKAGE; GATE OXIDE; TRANSISTOR; RECONSTRUCTION; DIELECTRICS; DESIGN; MODEL; HBTS; Engineering, Electrical & Electronic

    Abstract

    This letter evaluates a radio-frequency (RF) method to extract the gate capacitance for SOI MOSFETs with ultrathin ultraleaky gate dielectrics. Conventional methods such as two-element and three-element methods using precision impedance analyzer were also compared. The RF method scans the RF capacitance data, assesses its lower and upper limits, and extracts the SOI gate capacitance accurately independent of gate oxide thickness.

    Journal Title

    Ieee Electron Device Letters

    Volume

    28

    Issue/Number

    1

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    45

    Last Page

    47

    WOS Identifier

    WOS:000243280900016

    ISSN

    0741-3106

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