Title

Evaluation of RF capacitance extraction for ultrathin ultraleaky SOI MOS devices

Authors

Authors

C. Yu; J. Zhang; J. S. Yuan; F. Duan; S. K. Jayanarananan; A. Marathe; S. Cooper; V. Pham;J. S. Goo

Comments

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Abbreviated Journal Title

IEEE Electron Device Lett.

Keywords

capacitance measurement; inversion oxide thickness; leakage current; radio frequency (RF; S-parameter; VOLTAGE CHARACTERISTICS; HIGH LEAKAGE; GATE OXIDE; TRANSISTOR; RECONSTRUCTION; DIELECTRICS; DESIGN; MODEL; HBTS; Engineering, Electrical & Electronic

Abstract

This letter evaluates a radio-frequency (RF) method to extract the gate capacitance for SOI MOSFETs with ultrathin ultraleaky gate dielectrics. Conventional methods such as two-element and three-element methods using precision impedance analyzer were also compared. The RF method scans the RF capacitance data, assesses its lower and upper limits, and extracts the SOI gate capacitance accurately independent of gate oxide thickness.

Journal Title

Ieee Electron Device Letters

Volume

28

Issue/Number

1

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

45

Last Page

47

WOS Identifier

WOS:000243280900016

ISSN

0741-3106

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