Integrated InGaAsP MQW Mach-Zehnder modulator

    Authors

    D. A. May-Arrioja; P. LiKamWa; I. Shubin;P. K. L. Yu

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Microelectron. J.

    Keywords

    integrated optics; electro-optic device; modulator; photonic integrated; circuits; multiple quantum wells; semiconductor switches; optical switch; ZINC DIFFUSION; QUANTUM-WELLS; ZN DIFFUSION; INP; SWITCHES; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology

    Abstract

    We demonstrate the use of an area selective zinc in-diffusion process as a simple and efficient technique for the fabrication of integrated photonic devices. By controlling the profile of the diffusion front and the zinc depth the insertion losses of the devices can be minimized. Using this technique an integrated I x 2 Mach-Zehnder analog modulator was fabricated. Our experimental results demonstrate that the modulator exhibits excellent linearity for both TE and TM polarizations over a wavelength range of 40 nm. The measured on-chip losses in the order of 3 dB are obtained, which is significantly lower compared to the use of isolation trenches. (c) 2007 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Journal

    Volume

    39

    Issue/Number

    3-4

    Publication Date

    1-1-2008

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    660

    Last Page

    663

    WOS Identifier

    WOS:000255600600087

    ISSN

    0026-2692

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